| 摘要 |
Described is a SIT type organic thin film transistor in which gate electrodes are formed as a conductive layer where a plurality of wire-shaped conductive materials are arranged in such a manner that a distance to the nearest wire is 100 nm or less at any point in the space between the wires or a semiconductor portion (B) between the gate electrodes has a rectangular cross section formed by a length of shorter sides in the range of 20 nm to 200 nm and a length of longer side 2 mum or more. This provides an organic thin film transistor which can be fabricated easily at a low temperature, at a low cost, and with high-speed drive ability, a high ON/OFF ratio, and a high controllability.
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