| 发明名称 |
GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS |
| 摘要 |
Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
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| 申请公布号 |
US2009001519(A1) |
申请公布日期 |
2009.01.01 |
| 申请号 |
US20080207407 |
申请日期 |
2008.09.09 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;THE JAPAN SCIENCE AND TECHNOLOGY CENTER |
发明人 |
HASKELL BENJAMIN A.;FINI PAUL T.;MATSUDA SHIGEMASA;CRAVEN MICHAEL D.;DENBAARS STEVEN P.;SPECK JAMES S.;NAKAMURA SHUJI |
| 分类号 |
H01L21/203;H01L29/20 |
主分类号 |
H01L21/203 |
| 代理机构 |
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