发明名称 |
Semiconductor Light Emitting Device And Illuminating Device Using It |
摘要 |
The semiconductor light emitting device of the present invention comprises an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface side of the n-type nitride semiconductor layer 3, and a p-type nitride semiconductor layer 6 formed on a surface side of the emission layer 5. The emission layer 5 has an AlGaInN quantum well structure, and a second buffer layer 4 having the same composition as a barrier layer 5a of the emission layer 5 is provided between the n-type nitride semiconductor layer 3 and the emission layer 5. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.
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申请公布号 |
US2009001409(A1) |
申请公布日期 |
2009.01.01 |
申请号 |
US20060991418 |
申请日期 |
2006.09.04 |
申请人 |
TAKANO TAKAYOSHI;KONDO YUKIHIRO;IKEDA JUNJI;HIRAYAMA HIDEKI |
发明人 |
TAKANO TAKAYOSHI;KONDO YUKIHIRO;IKEDA JUNJI;HIRAYAMA HIDEKI |
分类号 |
H01L33/06;H01L33/12;H01L33/22;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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