发明名称 METHOD FOR FABRICATING PHOTOMASK
摘要 Provided is a method for fabricating a photomask. The method includes following processes. Light blocking patterns are formed on a mask substrate, and surface properties of the mask substrate on which the light blocking patterns are formed are changed into hydrophobicity. When the surface properties of the mask substrate are changed into the hydrophobicity, the mask substrate is treated using plasma gas. The plasma gas may be a gas mixture of trifluoromethane (CHF3), tetrafluoromethane (CF4), and hydrogen (H2).
申请公布号 US2009004574(A1) 申请公布日期 2009.01.01
申请号 US20070955332 申请日期 2007.12.12
申请人 HYINX SEMICONDUCTOR INC. 发明人 LEE JUN SIK
分类号 G03F1/00 主分类号 G03F1/00
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