发明名称 |
Diffusion Control in Heavily Doped Substrates |
摘要 |
This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.
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申请公布号 |
US2009004458(A1) |
申请公布日期 |
2009.01.01 |
申请号 |
US20070771683 |
申请日期 |
2007.06.29 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER ROBERT J.;VORONKOV VLADIMIR V.;MOIRAGHI LUCA;LEE DONGMYUN;CHO CHANRAE;RAVANI MARCO |
分类号 |
H01L21/20;C30B29/06 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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