| 摘要 |
Disclosed herein is a method of making a semiconductor device. According to the method, a flowable oxide (FOX) is deposited over a semiconductor substrate, and a local active region is exposed to grow an active region, by a silicon epitaxial growth (SEG) method, to prevent generation of a void when a device isolation structure is formed by a Shallow Trench Isolation (STI) method, and to prevent formation of stress between the semiconductor substrate and the FOX.
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