| 摘要 |
At least a laminate of a gate insulating film 6 and a gate electrode 7 and an active region 13 are formed on a silicon substrate 1, and an underlying interlayer insulating film 10 is further formed. Then, a conductor 11a connected to the gate electrode 7, and a conductor 11b that is a dummy conductor and is connected to the active region 13 are formed simultaneously on the underlying interlayer insulating film 10. Thereafter, an interlayer insulating film 12 is formed on the underlying interlayer insulating film 10 by a plasma process. At this time, charging current from a plasma 14 is emitted through the conductor 11b, which is a dummy conductor.
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