发明名称 |
HETEROCYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS |
摘要 |
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C.
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申请公布号 |
US2009001354(A1) |
申请公布日期 |
2009.01.01 |
申请号 |
US20070771196 |
申请日期 |
2007.06.29 |
申请人 |
SHUKLA DEEPAK;WELTER THOMAS R;AHEARN WENDY G |
发明人 |
SHUKLA DEEPAK;WELTER THOMAS R.;AHEARN WENDY G. |
分类号 |
H01L51/30;C07D487/04;H01L51/40 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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