发明名称 MEMORY ARRAY ON MORE THAN ONE DIE
摘要 For one disclosed embodiment, an apparatus may comprise a first die including a first plurality of memory cells for a memory array and a second die including a second plurality of memory cells for the memory array. The second die may include a shared line for the memory array to conduct digital signals for memory cells of both the first and second plurality of memory cells. Other embodiments are also disclosed.
申请公布号 US2009001601(A1) 申请公布日期 2009.01.01
申请号 US20070771054 申请日期 2007.06.29
申请人 INTEL CORPORATION 发明人 TAUFIQUE MOHAMMED H.;JALLICE DERWIN;MCCAULEY DONALD W.;DEVALE JOHN P.;RUPLEY, II JEFFREY P.;BREKELBAUM EDWARD A.;LOH GABRIEL H.;BLACK BRYAN
分类号 H01L23/48 主分类号 H01L23/48
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