| 摘要 |
Provided are an alignment key, a method for fabricating the alignment key, and a method for fabricating a thin film transistor substrate using the alignment key. The method for fabricating the alignment key includes forming a first metal layer on a base substrate, forming a first alignment key and a first mark portion of a second alignment key by selectively patterning the first metal layer, forming a dielectric on the first metal layer, forming a second metal layer on the dielectric, and forming a second mark portion of the second alignment key on the dielectric by selectively patterning the second metal layer. |
