| 发明名称 |
SINGLE CRYSTAL GROWING METHOD |
| 摘要 |
In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material.
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| 申请公布号 |
US2009000538(A1) |
申请公布日期 |
2009.01.01 |
| 申请号 |
US20080190230 |
申请日期 |
2008.08.12 |
| 申请人 |
NGK INSULATORS, LTD.;OSAKA UNIVERSITY;TOYODA GOSEI CO., LTD. |
发明人 |
IWAI MAKOTO;SHIMODAIRA TAKANAO;HIGASHIHARA SHUHEI;SASAKI TAKATOMO;MORI YUSUKE;KAWAMURA FUMIO;YAMASAKI SHIRO;HIRATA KOJI |
| 分类号 |
C30B17/00 |
主分类号 |
C30B17/00 |
| 代理机构 |
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