| 摘要 |
Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN-Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN-Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta-TaN Chemical Mechanical Polishing (CMP) as a basic "liner removal process" and as a "selective cap plating base removal process." In this first use, XeF2 is used to remove the metal liner, TaN-Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN-Ta) that was used to form a metal cap layer over the copper conductor.
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