发明名称 |
PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MATERIALS OVER NON-POLAR AND SEMI-POLAR SUBSTRATES |
摘要 |
<p>An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a pulsed selective area lateral overgrowth of a group III nitride layer can be achieved on a non-polar and semi-polar base layer. By utilizing the novel P-MOCVD or PALE and lateral over growth over selected area, very high lateral growth conditions can be achieved at relatively lower growth temperature which does not affect the III-N surfaces.</p> |
申请公布号 |
WO2009002365(A1) |
申请公布日期 |
2008.12.31 |
申请号 |
WO2007US87751 |
申请日期 |
2007.12.17 |
申请人 |
KHAN, M. ASIF;UNIVERSITY OF SOUTH CAROLINA;ADIVARAHAN, VINOD |
发明人 |
KHAN, M. ASIF;ADIVARAHAN, VINOD |
分类号 |
H01L21/28;H01L31/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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地址 |
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