| 摘要 |
A high voltage switch circuit capable of reducing voltage drop phenomenon is provided to improve efficiency of a nonvolatile memory device by increasing working speed of the high voltage switch due to an increase of a pumping level. A high voltage switch circuit capable of reducing voltage drop phenomenon comprises a signal receiving part(110), a high voltage switch driving part(120), and a high voltage switch part(130). The signal receiving part outputs an enable signal of a reading voltage level or a deactivated signal of a ground voltage level according to signal of a counter clock. The high voltage switch driving part operates according to an output of the signal receiving part, and increases a voltage level of a high voltage switch driving node by a reading voltage. The high voltage switch part delivers a high voltage of an input terminal to an output terminal. |
