| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to increase a distance between a contact plug and a stack gate of a high voltage transistor in a vertical direction by forming the contact plug and a step of the semiconductor substrate of both sides of a high voltage transistor. A gate(110) is formed in an active region of a semiconductor substrate(102). Junction areas are formed in the semiconductor substrate of both sides of the gate. A spacer is formed in a gate sidewall by using a first insulating layer(114). The semiconductor substrate is etched by using a first insulating layer spacer as the mask. A second insulating layer(116) is formed on the semiconductor substrate including the gate. Contact plugs(118a,118b) electrically connected to the junction areas are formed.</p> |
