SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided to increase a breakdown voltage in source and drain regions by isolating dopant injected by a trench in an ion injection process for forming an ohmic contact of a semiconductor substrate and a contact plug. A semiconductor substrate(10) with a gate is provided. A trench(20) covering a contact plug region is formed in a peripheral region of the gate. Source and drain regions are formed in a semiconductor substrate of both sides of the gate by performing an ion injection process. An interlayer insulating layer including a contact hole exposing a contact plug region is formed on the semiconductor substrate including the gate. A contact plug(34) filling the contact hole is formed in an upper side of a junction area of the contact plug area.