METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH RECESS GATE

摘要

The method of manufacturing the semiconductor device having recess gate is provided to control the hard mask material used in the recess gate process for the recess formation and to prevent the element failure and the additional loss of the field oxide film generated in the wet cleaning for removing r the hard mask pattern. The method of manufacturing the semiconductor device comprises as follows. A step is for forming the field oxide film(22) in the semiconductor substrate(21). A step is for forming the oxide hard mask(23) which has a higher wet etch rate than the field oxide film on the semiconductor substrate. A step is for forming the oxide film hard mask pattern for the recess by etching selectively the oxide hard mask. A step is for forming the recess by etching the semiconductor substrate using the etching barrier as the oxide film hard mask pattern. A step is for removing the oxide film hard mask pattern by performing the wet cleaning.