| 摘要 |
<p>A method for manufacturing a flash memory device is provided to improve stability of the product by preventing an electron trap phenomenon in a side spacer for a floating gate. A stack electrode(110) with a laminate structure of a gate oxide layer(112), a floating gate(114), an interlayer insulating layer(116), and a control gate(118) is formed in a semiconductor substrate(100). A side spacer(120a) is formed as an oxide film for the spacer for the side wall of the stack electrode. A second photosensitive pattern(PR-2) is formed to add a constant width thickness to the side wall of the side spacer. A source/drain junction is formed in both sides of the semiconductor substrate through ion injection using the second photosensitive pattern as a mask for ion injection.</p> |
