The method for manufacturing nanowires is provided to use the silicon nano wire that does not completely float as the sacrificial layer and to manufacture the nanowire which has the stress-proof in the material deposition. The nanowire manufacturing method comprises as follows. A step is for making the silicon nano wire. A step is for evaporating the material for making the nanowire in the silicon nano wire. A step is for removing the silicon nano wire. The silicon nano wire is connected to the silicon substrate(200) by the silicon or the oxide film.
申请公布号
KR20080114023(A)
申请公布日期
2008.12.31
申请号
KR20070063168
申请日期
2007.06.26
申请人
KOREA ELECTRONICS TECHNOLOGY INSTITUTE
发明人
LEE, KOOK NYUNG;SEONG, WOO KYEONG;JUNG, SEOK WON;KIM, WON HYO;CHO, NAM KYU