| 摘要 |
A semiconductor device (10) of the invention includes a semiconductor substrate (11) having a first insulating section (12) formed on one surface thereof. A first conductive section (13) is disposed on the one surface of the semiconductor substrate. A second insulating section (14) is superimposed over the first insulating section and covers the first conductive section. A second conductive section (15) is superimposed over the second insulating section. A third insulating section (16) is disposed over the second insulating section and covers the second conductive section. These first conductive section, second insulating section, second conductive section, third insulating section, and terminal (18) altogether constitute a structure (17). A third opening (19) is formed between adjacent structures. The third opening is formed passing through the third and second insulating sections to expose the first insulating section. |
