Light emitting diode and method for manufacturing the same
摘要
<p>Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.</p>
申请公布号
EP2009707(A2)
申请公布日期
2008.12.31
申请号
EP20080011068
申请日期
2008.06.18
申请人
SEOUL OPTO DEVICE CO., LTD.
发明人
KIM, DAE WON;KAL, DAE SUNG;KIM, HWA MOK;OH, DUCK HWAN