SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
<p>The present invention relates to a semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a Ill-nitride semiconductor light emitting device which improves external quantum efficiency by forming an irregular portion on a side of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.</p>
