| 摘要 |
A nonvolatile memory device capable of reducing current consumption is provided to reduce a total area by reducing the number of data line and device. A nonvolatile memory device(200) comprises the followings: a redundancy part(210) outputting a repair signal according to a match of a stored address and an address which is input; a decoder part(220) outputting a first driving signal driving a main page buffer according to a repair signal, and outputting a second driving signal driving a repair page buffer; a page buffer part(230) delivering a predetermined data to a local data line according to an output of the decoder part; and an input/output switch(250) transmitting data outputted in the local data line with a global data line. |
