| 摘要 |
A method for manufacturing a semiconductor device is provided to improve yield of the semiconductor device by preventing defect like a bunker when forming a capacitor of the semiconductor device. A storage node contact plug(23) is formed. A barrier metal layer(27) is formed in an upper portion of the storage node contact plug. An ohmic contact layer(27A) is formed between the storage node contact plug and the barrier metal layer through a first heat process. A second heat process is performed to reduce the stress when forming an ohmic contact layer. A lower electrode of the capacitor is formed in an upper portion of the ohmic contact layer.
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