| 摘要 |
<p>The semiconductor device and a method of manufacturing the same is provided to prevent the yield loss of the semiconductor device and reduction of the process margin by blocking the movement of the electric field. The semiconductor device comprises the active area, the shield film(112), the element isolation film, the operation gate and the adjacent gate(126). The shield film defines the active area. The shield film is formed in the side wall and bottom surface. The element isolation film has the protective film on the shield film. The operation gate is recessed on the passing gate on the element isolation film and the active area. The adjacent gate is adjacent to the operation gate. The semiconductor device prevents the decrease of threshold voltage by the voltage applied to the operation gate from the adjacent gate by the shield film.</p> |
