LINE OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

The wiring of the semiconductor device and a method of forming the same is provided to prevent the generation of the leakage current and increment of the contact resistance by forming the diffusion barrier of the triple-layer structure. The wiring of the semiconductor device comprises metal wirings(104, 124) and the diffusion barrier(122). The metal wiring consists of the desired pattern within insulating layers(110, 112) with the damascene surface. The diffusion barrier is formed in the damascene surface of the metal wiring. The diffusion barrier has the TaSixNy film inserted between the Ta group film. The metal wiring consists of the single trench structure with damascene.