发明名称 RADIATION DETECTOR, METHOD OF MANUFACTURING A RADIATION DETECTOR AND LITHOGRAPHIC APPARATUS COMPRISING A RADIATION DETECTOR
摘要 <p>A radiation detector having radiation sensing surface, manufacturing method thereof, and lithography apparatus including the same are provided to maintain or reduce overlay errors by using a strong TIS(Transmission Image Sensor). A radiation detector having a radiation sensing surface includes a silicon substrate(W), a dopant layer, a first electrode, and a second electrode. The silicone substrate has a surface region of a first face having a doping profile. The dopant layer is provided on the first face of the silicon substrate, and includes a first layer and a second layer of a dopant material. The second layer is diffusion layer contacting with the surface region of the first face of the silicon substrate. The first electrode is connected to the dopant layer. The second electrode is connected to the silicon substrate. The surface region of the first face of the silicon substrate and the second layer are arranged in order to form the radiation sensing surface.</p>
申请公布号 KR20080114545(A) 申请公布日期 2008.12.31
申请号 KR20080059443 申请日期 2008.06.24
申请人 ASML NETHERLANDS B.V. 发明人 NIHTIANOV STOYAN;VAN DER SIJS ARIE JOHAN;MOEST BEARRACH;KEMPER PETRUS WILHELMUS JOSEPHUS MARIA;HAAST MARC ANTONIUS MARIA;BAAS GERARDUS WILHELMUS PETRUS;NANVER LIS KAREN;SARUBBI FRANCESCO;SCHUWER ANTONIUS ANDREAS JOHANNES;GOMMEREN GREGORY MICHA;POT MARTIJN;SCHOLTES THOMAS LUDOVICUS MARIA
分类号 H01L21/66;H01L21/027 主分类号 H01L21/66
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