METHOD FOR ADJUST MASK LAYOUT

摘要

A method for adjusting a mask layout is provided to prevent a defect in a post-process by adjusting an original mask layout by previously detecting a defect of a post-process in a design process. A mask layout of target patterns is designed(S10). A simulation contour is obtained according to the change by changing the line width of the pattern included in the mask layout. An MEEF(Mask Error Enhancement Factor) is measured by using the line width data of the patterns included in a simulation contour and the mask layout(S12). The measured MEEF is verified(S13). The post-process is performed by using a mask layout passing through the verification step(S16).