METHOD FOR FORMING RECESS GATE OF SEMICONDUCTOR DEVICE

摘要

The method for forming the recess gate of the semiconductor device is provided to prevent the attack from being applied in the active area of misalignment between the element isolation film and the recess gate generated in the subsequent recess gate etch process. The method for forming the recess gate of the semiconductor device comprises as follows. A step is for forming the groove(H) by etching the gate forming area of the semiconductor substrate(100). A step is for oxidizing the semiconductor substrate region of the groove surface. A step is for removing the oxidized part to increase the line width of groove. A step is for forming the gate conductive film(118) on the groove with an increased line width.