| 摘要 |
<p>The semiconductor device fabricating method is provided to simplify the process by not applying the multi pocket. The semiconductor device fabricating method comprises as follows. A step is for forming the well in the semiconductor substrate(S101). A step is for forming the gate oxide in the semiconductor substrate(S103). A step is for forming the gate on the gate oxide(S105). A step is for forming the pocket in the lower potion of the gate(S107). A step is for performing the first spike anneal on the semiconductor substrate(S109). A step(S111) is for performing the deep source/drain implant process on the semiconductor substrate. A step is for performing the second spike anneal on the semiconductor substrate(S113).</p> |
