| 摘要 |
<p>A semiconductor device fabricating method is provided to a improve charge gain problem by forming a gate side wall including a oxynitride film in which the mobility of a mobile ion is less. A semiconductor device fabricating method comprises: a step for depositing a first nitride films(41) on a semiconductor substrate(1) in which a gate is formed; a step for etching so that a first nitride film remains in a gate sidewall after patterning a gate top; a step for forming a LCD area(2') by progressing a LDD(lightly doped drain) implantation process in the substrate found both sides of the gate in the first etch result; a step for forming an oxynitride film in the gate sidewall by oxidizing the first nitride film; a step for depositing successively a addition oxynitride film, a TEOS(tetraethly orthosilicate,42) film and a nitride film on the result of the substrate; and a step for forming a sidewall by secondly etching after patterning the gate top.</p> |
