NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE NON-VOLATILE MEMORY DEVICE

摘要

A non-volatile memory device and a manufacturing method thereof are provided to prevent that data which does not intend is programmed in a cell gate structure adjacent to a selection gate structure as an impurity region among gate structures includes impurity of high concentration. A non-volatile memory device comprises a selection gate structure(120), and a gate structure(140), a first impurity region(150), a second impurity region(152), a third impurity region(160) and a fourth impurity region(162). The selection gate structure is formed on a substrate(100). The cell gate structure is arranged parallel in the selection gate structure. The first impurity region is formed on the substrate between the selection gate structure and the cell gate structure which is adjacent to the selection gate structure. The first impurity region has a first width. The second impurity region is formed in the first impurity region. The second impurity region has a second width which becomes smaller than the first width. The third impurity region is formed on the substrate between the cell gate structures. The third impurity region has a third width. The fourth impurity region is formed in the third impurity region. The fourth impurity region has a fourth width which becomes smaller than the third width or the same as the third width.