| 摘要 |
A semiconductor device having a sense amplifier precharge layout is provided to suppress a gate peeling phenomenon by including a plurality of auxiliary patterns connected to a precharge gate side. A semiconductor device having a sense amplifier precharge layout comprises an active area, a precharge gate(310), and an auxiliary pattern(311). The active area is set up to be mutually detached by a device isolation film in a semiconductor substrate. The precharge gate arranges the active area as a stripe form with a first direction. The auxiliary pattern is arranged in the device isolation film with a second direction, and is connected to one side of the precharge gate. |
