METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE/CDS THIN FILM SOLAR CELL

摘要

A method for the formation of a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film comprising the steps of depositing a layer of As2Te3 on the CdTe layer at a substrate temperature comprised between ambient temperature and 200°C; depositing a layer of Cu on the As2Te3 layer; bringing at least the deposited Cu layer to a temperature comprised between 150° and 250°C. The method is used to form a stable back-contact on CdTe/CdS thin film solar cells.