发明名称 INTEGRATED TRANSFORMER AND METHOD OF FABRICATION THEREOF
摘要 <p>INTEGRATED TRANSFORMER AND METHOD OF FABRICATION THEREOF An integrated transformer structure includes a first coil element associated with a transverse axis, the first coil element having at least one turn. The first coil element inlcudes a first portion provided on a first lateral level, and a second portion provided on a second lateral level. The first and second lateral levels being mutually spaced apart along said transverse axis. The first and second portions being displaced laterally from said axis by different respective distances. At least one crossover portion of the first coil element, in which the first coil element being configured to provide a conducting path through at least a portion of the first portion of the first coil element to the crossover portion, through the crossover portion and subsequently through at least a portion of the second portion of the first coil element, in which any change of flow direction along said path is less than 90 degree in a lateral direction.</p>
申请公布号 SG148106(A1) 申请公布日期 2008.12.31
申请号 SG20080035347 申请日期 2008.05.08
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD;NANYANG TECHNOLOGICAL UNIVERSITY 发明人 CHEONG LIM CHEE;WAI CHEW KOK;SENG YEO KIAT;FEI LIM SUH;AH DO MANH;LAP CHAN
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