POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS WITH BRIDGED-GRAIN STRUCTURES
摘要
<p>A low temperature polycrystalline silicon device and techniques to manufacture thereof with excellent performance. Employing doped poly-Si lines which we called a bridged-grain structure (BG), the intrinsic or lightly doped channel is separated into multiple regions. A single gate covering the entire active channel including the doped lines is still used to control the current flow. Using this BG poly-Si as an active layer and making sure the TFT is designed so that the current flows perpendicularly to the parallel lines of grains, grain boundary effects can be reduced. Reliability, uniformity and the electrical performance of the BG poly-Si TFT are significantly improved compared with the conventional low temperature poly-Si TFT.</p>
申请公布号
WO2009000136(A1)
申请公布日期
2008.12.31
申请号
WO2008CN00313
申请日期
2008.02.04
申请人
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY;KWOK, HOISING;WONG, MAN;MENG, ZHIGUO;ZHAO, SHUYUN