| 摘要 |
<p>A method for fabricating a semiconductor device, capable of minimizing defects between a heterogeneous substrate and a nitride-based layer to grow a nitride-based thin film having good quality by introducing a 3-dimensional nanostructure which reduces lattice mismatching of a heterogeneous bonding structure and providing a semiconductor device having long lifetime and excellent light emitting characteristics, is disclosed. The method includes forming a buffer layer having a 3 -dimensional nanostructure using a nitride-based material on a heterogeneous substrate, sequentially forming a n-type clad layer, an active layer and a p-type clad layer on the heterogeneous substrate with the buffer layer, mesa etching specific portions of the p-type clad layer, the active layer and the n-type clad layer to expose the n-type clad layer, forming an ohmic contact layer made of a transparent material on the p-type clad layer, and forming electrodes on the ohmic contact layer and the n-type clad layer, respectively.</p> |
