| 摘要 |
A linear pattern array formation method and a semiconductor device according to the same and a photomask used with the same is provided to improve focus margin and exposure latitude in exposure as a part of a layout of a mask for exposure is changed to a dotted line pattern. A linear pattern array formation method comprises: a step for setting up layouts(100) including a plurality first strip-line patterns(110) arranged in order to have an equal first line width(CD) and a second strip-line pattern(130) arranged in order to have a second line width which is greater than a first line width in the outer side of the first strip-line patterns; a step for transferring the layout on a wafer; and a step for inducing light scattering in order to be changed to have a third strip-line pattern which is different with the first strip-line pattern as the layout of the first strip-line pattern of the outermost is changed into a dot line pattern(120) in which dot patterns(121) which are mutually detached are linearly arranged and a pattern transferred on the wafer depends on the size of a dotting pattern. |
