| 摘要 |
<p>A method for forming a pattern of a semiconductor is provided to prevent deformation of the pattern of the semiconductor device by forming a hard mask layer made of a carbon containing layer and performing a plasma process using HBr gas twice. A hard mask layer is formed in an upper part of an etching target layer(21). A photoresist pattern is formed in an upper part of a hard mask layer. A first pre-process is performed for relieving surface roughness of the photoresist pattern. A hard mask pattern(22A) is formed by etching the hard mask layer by using the first pre-processed photoresist pattern as an etching barrier. A second pre-process is performed by relieving the surface roughness of the hard mask pattern. The etching object layer is etched by using the second pre-processed hard mask pattern(22B) as the etching barrier.</p> |
