| 摘要 |
<p>The line pattern of the semiconductor device and a method of forming the same are provided to prevent the leaning phenomenon of the line pattern and to minimize the influence by the subsequent processes by performing a heat treatment before performing the etching for forming the line pattern. The method of forming the line pattern in the semiconductor device comprises as follows. A step is for forming the conductive film(21) on the substrate(20). A step is for forming the buffer layer(22) for preventing the stress of the upper film on the conductive film. A step is for forming the insulating layer on the buffer layer. A step is for patterning the insulating layer, and the buffer layer and conductive film by mask and etching process.</p> |
