| 摘要 |
A poly silicon etching method is provided to supply a profile according to a specific gravity of the specific chemical substance of the used etching reaction gas in the anisotropic etching. A specific gravity of the specified chemical substance among the etching reaction gas used for etching is controlled. An etching process is progressed by injecting the reaction gas of which specific gravity of the specified chemical substance is controlled to an etching chamber. The etching is performed by a plasma etching process using at least one of HBr, He and O2.
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