| 摘要 |
The invention discloses a semiconductor structure for the production of a carrier wafer contact in trench-isolated SOI disks, wherein said semiconductor structure can be used as deep contact (7, 6, 30') to the carrier wafer (1) of a thick SOI disk and/or as trench isolation (40). For both structures, the same method steps are used for the use thereof as deep contact to the carrier wafer of the thick SOI disk and also as trench isolation. |
