| 摘要 |
<p>The present invention provides a method for forming a semiconductor device (10) on a substrate (1) having a first major surface lying in a plane. The method comprises, after patterning the substrate (1) to form at least one structure (20) extending from the substrate (1) in a direction substantially perpendicular to the plane of the major surface of the substrate, forming locally modified regions (6) at locations in the substrate which are not covered by the at least one structure (20), thus locally increasing etching resistance of these regions (6). Forming locally modified regions may prevent under-etching of the at least one structure during further process steps in the formation of the semiconductor device (10). Forming locally modified regions (6) may be performed by implanting implantation elements into regions of the substrate (1) not covered by the at least one structure (20). The present invention furthermore provides a semiconductor device obtained by the method according to embodiments of the invention. The semiconductor devices according to embodiments of the invention have good electrical properties and good mechanical stability.</p> |
