发明名称 Manganese-doped metal-silicon-nitrides phosphors
摘要 <p>Mn-doped M 2 Si 5 N 8 (M = Ca, Sr, Ba) phosphors have been prepared by a solid state reaction method at high temperature and their photoluminescence properties were investigated. The Mn 2+ -activated M 2 Si 5 N 8 phosphors exhibit narrow emission bands in the wavelength range of 500-700 nm with peak centers at about 599, 606 and 567 nm for M = Ca, Sr, Ba, respectively, due to the 4 T 1 ( 4 G)? 6 A 1 ( 6 S) transition of Mn 2+ . The long-wavelength excitation and emission of Mn 2+ ions in the host of M 2 Si 5 N 8 are attributed to the effect of a strong crystal field of Mn 2+ in the nitrogen environment. It is observed that there exists energy transfer between M 2 Si 5 N 8 host lattice and activator (Mn 2+ ). The potential applications of these phosphors have been pointed out.</p>
申请公布号 EP2009077(A1) 申请公布日期 2008.12.31
申请号 EP20070111382 申请日期 2007.06.29
申请人 LEUCHTSTOFFWERK BREITUNGEN GMBH;LEDON LIGHTING JENNERSDORF GMBH 发明人 DUAN, CHENG-JUN;HINTZEN, HUBERTUS THERESIA;ROESLER, SYLKE;ROESLER, SVEN;STARICK, DETLEF
分类号 C09K11/59 主分类号 C09K11/59
代理机构 代理人
主权项
地址
您可能感兴趣的专利