发明名称 |
Manganese-doped metal-silicon-nitrides phosphors |
摘要 |
<p>Mn-doped M 2 Si 5 N 8 (M = Ca, Sr, Ba) phosphors have been prepared by a solid state reaction method at high temperature and their photoluminescence properties were investigated. The Mn 2+ -activated M 2 Si 5 N 8 phosphors exhibit narrow emission bands in the wavelength range of 500-700 nm with peak centers at about 599, 606 and 567 nm for M = Ca, Sr, Ba, respectively, due to the 4 T 1 ( 4 G)? 6 A 1 ( 6 S) transition of Mn 2+ . The long-wavelength excitation and emission of Mn 2+ ions in the host of M 2 Si 5 N 8 are attributed to the effect of a strong crystal field of Mn 2+ in the nitrogen environment. It is observed that there exists energy transfer between M 2 Si 5 N 8 host lattice and activator (Mn 2+ ). The potential applications of these phosphors have been pointed out.</p> |
申请公布号 |
EP2009077(A1) |
申请公布日期 |
2008.12.31 |
申请号 |
EP20070111382 |
申请日期 |
2007.06.29 |
申请人 |
LEUCHTSTOFFWERK BREITUNGEN GMBH;LEDON LIGHTING JENNERSDORF GMBH |
发明人 |
DUAN, CHENG-JUN;HINTZEN, HUBERTUS THERESIA;ROESLER, SYLKE;ROESLER, SVEN;STARICK, DETLEF |
分类号 |
C09K11/59 |
主分类号 |
C09K11/59 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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