| 摘要 |
The method for forming bit line of the semiconductor memory device is provided to prevent USD fault by accurately controlling the size of the contact hole formed in the outer side of the cell array region in the bit line contact hole formation. The method for forming bit line of the semiconductor memory device comprises as follows. A step is for forming the interlayer insulating film which covers the gate pattern(110) formed on the semiconductor substrate. The step is for forming the photoresist pattern including the bit line contact hole pattern which is regularly arranged in the cell array region with the constant interval and the assistant pattern arranged in the edge of the cell array region. A step is for forming the bit line contact hole(120) and the secondary contact hole by patterning the interlayer insulating film using the photoresist pattern. A step is for forming the bit line connecting with the semiconductor substrate through the bit line contact hole.
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