| 摘要 |
The method of forming the interlayer insulating film the semiconductor device is provided to improve the electrical property by not flowing TEOS in the seasoning process after the chamber cleaning process. The method of forming the interlayer insulating film in the semiconductor device comprises as follows. The process(910) is for performing the chamber cleaning process on the semiconductor substrate having the transistor structure. The process(914) is for performing the seasoning process which does not flow TEOS after the chamber cleaning(912). The process is for forming the PMD (Pre-Metal Dielectric) liner oxidation as the insulating layer on the semiconductor substrate after the seasoning process. The process(916) is for forming the pre-metal dielectric layer on the PMD liner oxidation.
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