| 摘要 |
A manufacturing method of a semiconductor device is provided to improve reliability of a device and yield of a device by removing impurity generated in a metal wiring formation process. A manufacturing method of a semiconductor device comprises: a step for forming an interlayer insulating film in which a damascene pattern(75) is formed on a semiconductor substrate(10) in which a lower metal wiring(24) is formed; a step for forming a seed layer on the interlayer insulating film including the damascene pattern; a step for progressing a process of removing impurity generated in the seed layer formation by using H2; and a step for forming a copper routing(90) by reclaiming the damascene pattern.
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