AMORPHOUS COMPOSITE OXIDE FILM, CRYSTALLINE COMPOSITE OXIDE FILM, PROCESS FOR PRODUCING AMORPHOUS COMPOSITE OXIDE FILM, PROCESS FOR PRODUCING CRYSTALLINE COMPOSITE OXIDE FILM, AND COMPOSITE OXIDE SINTER

摘要

An amorphous film characterized by consisting substantially of indium, tin, magnesium, and oxygen and having a tin content of 5-15% in terms of Sn/(In+Sn+Mg) atom number ratio and a magnesium content of 0.1-2.0% in terms of Mg/(In+Sn+Mg) atom number ratio, with the remainder being indium and oxygen. The film is further characterized by being crystallized by annealing the film at a temperature not higher than 260°C to come to have a resistivity of 0.4 mO or lower. An amorphous ITO film for use in producing an ITO thin film for use as, e.g., a display electrode in flat panel displays is obtained by film deposition by sputtering without heating the substrate and without the need of adding water during the film deposition. This amorphous ITO film has the property of being crystallized by annealing at 260°C or lower, which is not so high, and thereby coming to have a reduced resistivity. Also provided are: a process for producing the film; and a sinter for use in the film production.