发明名称 RESIN SUBSTRATE
摘要 <p>A resin substrate which comprises a resin layer and a surface layer formed on a surface of the resin layer. The surface layer is a layer comprising silicon nitride as the main ingredient and deposited by the chemical vapor-phase growth method. In the interface between the resin layer and the surface layer, when the difference between the maximum nitrogen concentration in the surface layer and the steady-state nitrogen concentration in the resin layer is taken as 100%, then the interfacial region over which the nitrogen concentration therein changes from 80% to 20% has a thickness of 25 nm or smaller. The surface layer has an average surface roughness (Ra) of 1 nm or less. This resin substrate combines water-vapor-barrier properties with flatness.</p>
申请公布号 WO2009001924(A1) 申请公布日期 2008.12.31
申请号 WO2008JP61726 申请日期 2008.06.27
申请人 ULVAC, INC.;UBE INDUSTRIES, LTD.;FUJINAGA, TETSUSHI;TAKAGI, MAKIKO;HASHIMOTO, MASANORI;ASARI, SHIN;OYAMA, RYUJI 发明人 FUJINAGA, TETSUSHI;TAKAGI, MAKIKO;HASHIMOTO, MASANORI;ASARI, SHIN;OYAMA, RYUJI
分类号 B32B9/00;C23C16/42 主分类号 B32B9/00
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