| 摘要 |
<p>A method for manufacturing a semiconductor device with a recess channel of a bulb type is provided to improve an electrical characteristic of a semiconductor device by forming a silicon oxide layer with a uniform thickness. A first trench is formed in an active region of a semiconductor substrate(100). The silicon oxide layer is formed by performing a radical oxide process in a sidewall of the first trench. A barrier spacer is formed in the sidewall of the first trench by anisotropically etching the silicon oxide layer. A second trench(130a) of a belt type which is connected to the first trench is formed by etching the semiconductor substrate of the bottom of the first trench. An insulating layer(150), a conductive layer(160), a metal layer(180), and a hard mask layer(190) are formed on the second trench. The gate stack is formed by patterning the hard mask layer, the metal layer, the conductive layer, and the insulating layer.</p> |
